Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates

Jihoon Choi, Seokhoon Kim, Jinwoo Kim, Hyunseok Kang, Hyeongtag Jeon, Choelhwyi Bae

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Characteristics of remote plasma atomic layer-deposited Hf O2 on Si, which has a very thin Si O2 interlayer with and without remote plasma nitridation, have been investigated. The thin (∼1.5 nm) intermediate layer containing nitrogen, which was prepared by sequential O2 and N2 remote plasma treatment of the Si substrate, can effectively suppress growth of the unintentional interface layer. In addition, it enhances the thermal stability and the resistance to oxygen diffusion during rapid thermal annealing. The Hf O2 film containing the remote plasma nitrided Si O2 interlayer annealed at 800 °C showed a lower equivalent oxide thickness of ∼1.89 nm and a lower leakage current density (3.78× 10-7 A cm-2 at ∫ VG - VFB ∫ =2 V) compared to a non-nitrided sample of the same physical thickness. Also, we compared the characteristics of Hf O2 films annealed in two different ambient environments, N2 and O2.

Original languageEnglish
Pages (from-to)678-681
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume24
Issue number3
DOIs
StatePublished - 2006 May 22

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Plasmas
Substrates
interlayers
Nitridation
Rapid thermal annealing
Leakage currents
Oxides
Thermodynamic stability
leakage
thermal stability
Current density
Nitrogen
current density
Oxygen
nitrogen
annealing
oxides
oxygen

Cite this

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title = "Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates",
abstract = "Characteristics of remote plasma atomic layer-deposited Hf O2 on Si, which has a very thin Si O2 interlayer with and without remote plasma nitridation, have been investigated. The thin (∼1.5 nm) intermediate layer containing nitrogen, which was prepared by sequential O2 and N2 remote plasma treatment of the Si substrate, can effectively suppress growth of the unintentional interface layer. In addition, it enhances the thermal stability and the resistance to oxygen diffusion during rapid thermal annealing. The Hf O2 film containing the remote plasma nitrided Si O2 interlayer annealed at 800 °C showed a lower equivalent oxide thickness of ∼1.89 nm and a lower leakage current density (3.78× 10-7 A cm-2 at ∫ VG - VFB ∫ =2 V) compared to a non-nitrided sample of the same physical thickness. Also, we compared the characteristics of Hf O2 films annealed in two different ambient environments, N2 and O2.",
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Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates. / Choi, Jihoon; Kim, Seokhoon; Kim, Jinwoo; Kang, Hyunseok; Jeon, Hyeongtag; Bae, Choelhwyi.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 24, No. 3, 22.05.2006, p. 678-681.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates

AU - Choi, Jihoon

AU - Kim, Seokhoon

AU - Kim, Jinwoo

AU - Kang, Hyunseok

AU - Jeon, Hyeongtag

AU - Bae, Choelhwyi

PY - 2006/5/22

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AB - Characteristics of remote plasma atomic layer-deposited Hf O2 on Si, which has a very thin Si O2 interlayer with and without remote plasma nitridation, have been investigated. The thin (∼1.5 nm) intermediate layer containing nitrogen, which was prepared by sequential O2 and N2 remote plasma treatment of the Si substrate, can effectively suppress growth of the unintentional interface layer. In addition, it enhances the thermal stability and the resistance to oxygen diffusion during rapid thermal annealing. The Hf O2 film containing the remote plasma nitrided Si O2 interlayer annealed at 800 °C showed a lower equivalent oxide thickness of ∼1.89 nm and a lower leakage current density (3.78× 10-7 A cm-2 at ∫ VG - VFB ∫ =2 V) compared to a non-nitrided sample of the same physical thickness. Also, we compared the characteristics of Hf O2 films annealed in two different ambient environments, N2 and O2.

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