Characteristics of nano floating gate memory with Au nano-particles and SiON dielectrics

Min Seung Lee, Dong Uk Lee, Jae Hoon Kim, Eun Kyu Kim, Won Mok Kim, Won Ju Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We fabricated the floating gated non-volatile memory devices with Au nano-particles embedded in SiO1.3N1 and SiO2 dielectrics. The floating gate memory devices as a type of field effect transistor (FET) with the Au particle layer were fabricated with the thicknesses of tunneling barrier of 3 and 5 nm, control insulators of 45 nm by SiO 2 and SiO1.3N1 layers, respectively. Au thin films were deposited by using sputtering method and then, the size of Au nano-particles in the range of 1-5 nm could be controlled with nominal Au film thickness. The devices show current shift which due to programming and erasing works perform by a gate bias stress repeatedly.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages1385-1386
Number of pages2
DOIs
StatePublished - 2007 Dec 1
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 2006 Jul 242006 Jul 28

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period06/07/2406/07/28

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floating
programming
film thickness
field effect transistors
sputtering
insulators
shift
thin films

Cite this

Lee, M. S., Lee, D. U., Kim, J. H., Kim, E. K., Kim, W. M., & Cho, W. J. (2007). Characteristics of nano floating gate memory with Au nano-particles and SiON dielectrics. In Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B (pp. 1385-1386). (AIP Conference Proceedings; Vol. 893). https://doi.org/10.1063/1.2730420
Lee, Min Seung ; Lee, Dong Uk ; Kim, Jae Hoon ; Kim, Eun Kyu ; Kim, Won Mok ; Cho, Won Ju. / Characteristics of nano floating gate memory with Au nano-particles and SiON dielectrics. Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. 2007. pp. 1385-1386 (AIP Conference Proceedings).
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abstract = "We fabricated the floating gated non-volatile memory devices with Au nano-particles embedded in SiO1.3N1 and SiO2 dielectrics. The floating gate memory devices as a type of field effect transistor (FET) with the Au particle layer were fabricated with the thicknesses of tunneling barrier of 3 and 5 nm, control insulators of 45 nm by SiO 2 and SiO1.3N1 layers, respectively. Au thin films were deposited by using sputtering method and then, the size of Au nano-particles in the range of 1-5 nm could be controlled with nominal Au film thickness. The devices show current shift which due to programming and erasing works perform by a gate bias stress repeatedly.",
author = "Lee, {Min Seung} and Lee, {Dong Uk} and Kim, {Jae Hoon} and Kim, {Eun Kyu} and Kim, {Won Mok} and Cho, {Won Ju}",
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Lee, MS, Lee, DU, Kim, JH, Kim, EK, Kim, WM & Cho, WJ 2007, Characteristics of nano floating gate memory with Au nano-particles and SiON dielectrics. in Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. AIP Conference Proceedings, vol. 893, pp. 1385-1386, 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, 06/07/24. https://doi.org/10.1063/1.2730420

Characteristics of nano floating gate memory with Au nano-particles and SiON dielectrics. / Lee, Min Seung; Lee, Dong Uk; Kim, Jae Hoon; Kim, Eun Kyu; Kim, Won Mok; Cho, Won Ju.

Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. 2007. p. 1385-1386 (AIP Conference Proceedings; Vol. 893).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Lee MS, Lee DU, Kim JH, Kim EK, Kim WM, Cho WJ. Characteristics of nano floating gate memory with Au nano-particles and SiON dielectrics. In Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. 2007. p. 1385-1386. (AIP Conference Proceedings). https://doi.org/10.1063/1.2730420