Characteristics of low-κ SiOC films deposited via atomic layer deposition

Jaemin Lee, Woochool Jang, Hyunjung Kim, Seokyoon Shin, Youngkyun Kweon, Kunyoung Lee, Hyeongtag Jeon

Research output: Contribution to journalArticle

5 Scopus citations


The deposition of SiOC thin films via remote plasma atomic layer deposition was investigated. Octamethylcyclotetrasiloxane (OMCTS) and O2, Ar, H2 plasmas were respectively used as a precursor and reactants during the deposition process at 400 °C. Plasma and deposition temperatures had a significant effect on the physical and electrical characteristics of the films. When Ar and H2 plasma was respectively used during the deposition process, films exhibited low dielectric constants while incorporating carbon; however, O2 plasma yielded carbon free SiO2 films. Low dielectric constants resulted in low film densities and the presence of carbon within the films. When Ar and H2 plasma was used as the reactant gas, pores within the films with loose structures and Si–C bonds served to lower the dielectric constant. As a result, Ar and H2 plasma conditions exhibited low dielectric constants of 2.7 and 3.1 at 100 °C, respectively. Meanwhile, the presence of carbon and low film densities caused leakage paths within the films. X-ray photoelectron spectroscopy supported analyses demonstrating the bonding characteristics of Si, C, O components.

Original languageEnglish
Pages (from-to)334-339
Number of pages6
JournalThin Solid Films
StatePublished - 2018 Jan 1


  • Atomic layer deposition
  • Low-dielectric constant
  • Octamethylcyclotetrasiloxane
  • Silicon oxycarbide
  • Thin film

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