Characteristics of erbium-silicided n-type Schottky barrier tunnel transistors

Moongyu Jang, Jihun Oh, Sunglyul Maeng, Wonju Cho, Seongjae Lee, Kicheon Kang, Kyoungwan Park

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

The characteristics of erbium-silicided n-type Schottky barrier tunnel transistors (SBTT) were discussed. In drain current to drain voltage characteristics, the n-type SBTT with 60 nm gate lengths showed typical transistor behaviors. The results showed that the drain current on/off ratio is about 105 at low drain voltage regime in drain current to gate voltage characteristics.

Original languageEnglish
Pages (from-to)2611-2613
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number13
DOIs
StatePublished - 2003 Sep 29

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erbium
tunnels
transistors
electric potential
low voltage

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Jang, Moongyu ; Oh, Jihun ; Maeng, Sunglyul ; Cho, Wonju ; Lee, Seongjae ; Kang, Kicheon ; Park, Kyoungwan. / Characteristics of erbium-silicided n-type Schottky barrier tunnel transistors. In: Applied Physics Letters. 2003 ; Vol. 83, No. 13. pp. 2611-2613.
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Jang, M, Oh, J, Maeng, S, Cho, W, Lee, S, Kang, K & Park, K 2003, 'Characteristics of erbium-silicided n-type Schottky barrier tunnel transistors', Applied Physics Letters, vol. 83, no. 13, pp. 2611-2613. https://doi.org/10.1063/1.1614441

Characteristics of erbium-silicided n-type Schottky barrier tunnel transistors. / Jang, Moongyu; Oh, Jihun; Maeng, Sunglyul; Cho, Wonju; Lee, Seongjae; Kang, Kicheon; Park, Kyoungwan.

In: Applied Physics Letters, Vol. 83, No. 13, 29.09.2003, p. 2611-2613.

Research output: Contribution to journalArticle

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AU - Jang, Moongyu

AU - Oh, Jihun

AU - Maeng, Sunglyul

AU - Cho, Wonju

AU - Lee, Seongjae

AU - Kang, Kicheon

AU - Park, Kyoungwan

PY - 2003/9/29

Y1 - 2003/9/29

N2 - The characteristics of erbium-silicided n-type Schottky barrier tunnel transistors (SBTT) were discussed. In drain current to drain voltage characteristics, the n-type SBTT with 60 nm gate lengths showed typical transistor behaviors. The results showed that the drain current on/off ratio is about 105 at low drain voltage regime in drain current to gate voltage characteristics.

AB - The characteristics of erbium-silicided n-type Schottky barrier tunnel transistors (SBTT) were discussed. In drain current to drain voltage characteristics, the n-type SBTT with 60 nm gate lengths showed typical transistor behaviors. The results showed that the drain current on/off ratio is about 105 at low drain voltage regime in drain current to gate voltage characteristics.

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