Characteristics and compositional variation of TiN films deposited by remote PEALD on contact holes

Ju Youn Kim, Do Youl Kim, Hee Ok Park, Hyeongtag Jeon

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

TiN films were deposited by remote plasma-enhanced atomic layer deposition (PEALD) and a metalorganic chemical vapor deposition (MOCVD) method with post-plasma-treatment using the same precursor, tetrakis (dimethylamino)titanium (TDMAT), as a Ti source. In remote PEALD, the plasmas of hydrogen, nitrogen, and ammonia were used, while in MOCVD, the ammonia gas was used as a reactant and followed by the post-plasma-treatment with hydrogen or nitrogen. The TiN films deposited by remote PEALD showed a relatively constant compositional variation with carbon impurity contents less than 5 atom %. The TiN film exhibited amorphous phase at annealing temperatures up to 500°C and transferred to a crystalline phase after annealing above 550°C. The measured growth rate of TiN films was about 2θ per cycle. The TiN films also showed excellent step coverage above 95% with a very high aspect ratio structure. The TiN film deposited by remote PEALD exhibited almost uniform compositional variation in depth with less than 3 atom % carbon impurity at the top and side of contact hole. However, the TIN films deposited by MOCVD with post-plasma-treatment showed nonuniform compositional variations depending on the positions with about 5 and 10 atom % carbon impurity at the top and side on contact hole, respectively.

Original languageEnglish
Pages (from-to)G29-G34
JournalJournal of the Electrochemical Society
Volume152
Issue number1
DOIs
StatePublished - 2005 Feb 7

Fingerprint

Atomic layer deposition
atomic layer epitaxy
electric contacts
Plasmas
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Carbon
Impurities
Ammonia
impurities
Atoms
ammonia
Hydrogen
carbon
Nitrogen
Annealing
atoms
nitrogen
annealing
Amorphous films

Cite this

@article{66a3d8a7980e4400a594dcb78bb17e4b,
title = "Characteristics and compositional variation of TiN films deposited by remote PEALD on contact holes",
abstract = "TiN films were deposited by remote plasma-enhanced atomic layer deposition (PEALD) and a metalorganic chemical vapor deposition (MOCVD) method with post-plasma-treatment using the same precursor, tetrakis (dimethylamino)titanium (TDMAT), as a Ti source. In remote PEALD, the plasmas of hydrogen, nitrogen, and ammonia were used, while in MOCVD, the ammonia gas was used as a reactant and followed by the post-plasma-treatment with hydrogen or nitrogen. The TiN films deposited by remote PEALD showed a relatively constant compositional variation with carbon impurity contents less than 5 atom {\%}. The TiN film exhibited amorphous phase at annealing temperatures up to 500°C and transferred to a crystalline phase after annealing above 550°C. The measured growth rate of TiN films was about 2θ per cycle. The TiN films also showed excellent step coverage above 95{\%} with a very high aspect ratio structure. The TiN film deposited by remote PEALD exhibited almost uniform compositional variation in depth with less than 3 atom {\%} carbon impurity at the top and side of contact hole. However, the TIN films deposited by MOCVD with post-plasma-treatment showed nonuniform compositional variations depending on the positions with about 5 and 10 atom {\%} carbon impurity at the top and side on contact hole, respectively.",
author = "Kim, {Ju Youn} and Kim, {Do Youl} and Park, {Hee Ok} and Hyeongtag Jeon",
year = "2005",
month = "2",
day = "7",
doi = "10.1149/1.1825913",
language = "English",
volume = "152",
pages = "G29--G34",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
number = "1",

}

Characteristics and compositional variation of TiN films deposited by remote PEALD on contact holes. / Kim, Ju Youn; Kim, Do Youl; Park, Hee Ok; Jeon, Hyeongtag.

In: Journal of the Electrochemical Society, Vol. 152, No. 1, 07.02.2005, p. G29-G34.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Characteristics and compositional variation of TiN films deposited by remote PEALD on contact holes

AU - Kim, Ju Youn

AU - Kim, Do Youl

AU - Park, Hee Ok

AU - Jeon, Hyeongtag

PY - 2005/2/7

Y1 - 2005/2/7

N2 - TiN films were deposited by remote plasma-enhanced atomic layer deposition (PEALD) and a metalorganic chemical vapor deposition (MOCVD) method with post-plasma-treatment using the same precursor, tetrakis (dimethylamino)titanium (TDMAT), as a Ti source. In remote PEALD, the plasmas of hydrogen, nitrogen, and ammonia were used, while in MOCVD, the ammonia gas was used as a reactant and followed by the post-plasma-treatment with hydrogen or nitrogen. The TiN films deposited by remote PEALD showed a relatively constant compositional variation with carbon impurity contents less than 5 atom %. The TiN film exhibited amorphous phase at annealing temperatures up to 500°C and transferred to a crystalline phase after annealing above 550°C. The measured growth rate of TiN films was about 2θ per cycle. The TiN films also showed excellent step coverage above 95% with a very high aspect ratio structure. The TiN film deposited by remote PEALD exhibited almost uniform compositional variation in depth with less than 3 atom % carbon impurity at the top and side of contact hole. However, the TIN films deposited by MOCVD with post-plasma-treatment showed nonuniform compositional variations depending on the positions with about 5 and 10 atom % carbon impurity at the top and side on contact hole, respectively.

AB - TiN films were deposited by remote plasma-enhanced atomic layer deposition (PEALD) and a metalorganic chemical vapor deposition (MOCVD) method with post-plasma-treatment using the same precursor, tetrakis (dimethylamino)titanium (TDMAT), as a Ti source. In remote PEALD, the plasmas of hydrogen, nitrogen, and ammonia were used, while in MOCVD, the ammonia gas was used as a reactant and followed by the post-plasma-treatment with hydrogen or nitrogen. The TiN films deposited by remote PEALD showed a relatively constant compositional variation with carbon impurity contents less than 5 atom %. The TiN film exhibited amorphous phase at annealing temperatures up to 500°C and transferred to a crystalline phase after annealing above 550°C. The measured growth rate of TiN films was about 2θ per cycle. The TiN films also showed excellent step coverage above 95% with a very high aspect ratio structure. The TiN film deposited by remote PEALD exhibited almost uniform compositional variation in depth with less than 3 atom % carbon impurity at the top and side of contact hole. However, the TIN films deposited by MOCVD with post-plasma-treatment showed nonuniform compositional variations depending on the positions with about 5 and 10 atom % carbon impurity at the top and side on contact hole, respectively.

UR - http://www.scopus.com/inward/record.url?scp=12744255042&partnerID=8YFLogxK

U2 - 10.1149/1.1825913

DO - 10.1149/1.1825913

M3 - Article

AN - SCOPUS:12744255042

VL - 152

SP - G29-G34

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 1

ER -