Change in band alignment of Hf O2 films with annealing treatments

C. J. Yim, D. H. Ko, M. H. Jang, K. B. Chung, M. H. Cho, H. T. Jeon

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Abstract

Energy band alignment of a nitrided Hf O2 film and dependence of the band gap (Eg) on annealing treatments with nitrogen plasma and ambient gases (N2 and O2) were studied by reflection electron energy loss spectra and x-ray photoelectron spectroscopy. We also investigated the nitrogen content in the film and its influence on the band alignment using medium energy ion scattering. The nitrogen incorporated into the Hf O2 film by directed nitrogen plasma treatment significantly decreased the band gap and band offsets, i.e., the incorporated N in the film decreased both conduction and valance band offsets. The nitrogen content in depth direction was dependent on the postannealing conditions using O2 or N2.

Original languageEnglish
Article number012922
JournalApplied Physics Letters
Volume92
Issue number1
DOIs
StatePublished - 2008 Jan 16

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