Carrier compensation behaviors in Si-doped AlxGa1-xAs epilayers due to thermal annealing

H. G. Lee, T. W. Kang, T. W. Kim

Research output: Contribution to journalArticle

Abstract

Van der Pauw-Hall effect measurements were carried out to determine the carrier density and the mobility of Si-doped Al0.25Ga0.75As epilayers. The epilayers were grown on semi-insulating GaAs (100) substrates using molecular beam epitaxy (MBE). Photoluminescence (PL) measurements were performed to investigate the optical behaviors in the layers. It was found that as the annealing temperature increased to 700 °C, the mobilities of the layers decreased and their carrier concentration increased. Both the mobility and the carrier concentration decreased while annealing at 950 °C, and the PL peak related to the carrier compensation was observed.

Original languageEnglish
Pages (from-to)49-51
Number of pages3
JournalJournal of Materials Science Letters
Volume21
Issue number1
DOIs
StatePublished - 2002 Jan 1

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