Broadband antireflective coatings for high efficiency InGaP/GaAs/InGaAsP/InGaAs multi-junction solar cells

Gyujin Oh, Yeongho Kim, Sang Jun Lee, Eun Kyu Kim

Research output: Contribution to journalArticle

Abstract

Design and fabrication of antireflection coatings (ARCs) was performed to maximize the photocurrent of Ⅲ-Ⅴ solar cells based on InGaP, GaAs, InGaAsP, and InGaAs. The current-limiting behavior of multi-junction solar cells allowed only the specific design of ARCs to improve the total current density of multi-junction solar cells, which enabled thin and efficient antireflection layers to achieve their full potential. ARCs were designed for InGaP/GaAs and InGaAsP/InGaAs double junction solar cells and InGaP/GaAs/InGaAsP/InGaAs quadruple junction solar cells. From the ARC design results, the best solar cell reflectance at the region of interest appeared to be 1.44% for InGaP/GaAs solar cells, 2.17% for InGaAsP/InGaAs, and 0.48% for the quadruple junction solar cells. To achieve the preferred refractive index for the ARC structures, nanostructures fabricated via glancing angle deposition were utilized. With ARC fabricated structures, InGaP/GaAs double junction solar cells yielded a power conversion efficiency of 13.3%, which was 1.34 times higher than that of cells without ARC (9.91%). Additionally, calculation results for the various ARC designs using dual and triple material systems were provided to increase their applicability.

Original languageEnglish
Article number110359
JournalSolar Energy Materials and Solar Cells
Volume207
DOIs
StatePublished - 2020 Apr

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Antireflection coatings
Solar cells
Coatings
Multi-junction solar cells
gallium arsenide
Photocurrents
Conversion efficiency
Nanostructures
Refractive index
Current density
Fabrication

Keywords

  • Anti-reflection coating
  • Glancing angle deposition
  • Multi-junction solar cell
  • Ⅲ-Ⅴ Solar cells

Cite this

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title = "Broadband antireflective coatings for high efficiency InGaP/GaAs/InGaAsP/InGaAs multi-junction solar cells",
abstract = "Design and fabrication of antireflection coatings (ARCs) was performed to maximize the photocurrent of Ⅲ-Ⅴ solar cells based on InGaP, GaAs, InGaAsP, and InGaAs. The current-limiting behavior of multi-junction solar cells allowed only the specific design of ARCs to improve the total current density of multi-junction solar cells, which enabled thin and efficient antireflection layers to achieve their full potential. ARCs were designed for InGaP/GaAs and InGaAsP/InGaAs double junction solar cells and InGaP/GaAs/InGaAsP/InGaAs quadruple junction solar cells. From the ARC design results, the best solar cell reflectance at the region of interest appeared to be 1.44{\%} for InGaP/GaAs solar cells, 2.17{\%} for InGaAsP/InGaAs, and 0.48{\%} for the quadruple junction solar cells. To achieve the preferred refractive index for the ARC structures, nanostructures fabricated via glancing angle deposition were utilized. With ARC fabricated structures, InGaP/GaAs double junction solar cells yielded a power conversion efficiency of 13.3{\%}, which was 1.34 times higher than that of cells without ARC (9.91{\%}). Additionally, calculation results for the various ARC designs using dual and triple material systems were provided to increase their applicability.",
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author = "Gyujin Oh and Yeongho Kim and Lee, {Sang Jun} and Kim, {Eun Kyu}",
year = "2020",
month = "4",
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language = "English",
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Broadband antireflective coatings for high efficiency InGaP/GaAs/InGaAsP/InGaAs multi-junction solar cells. / Oh, Gyujin; Kim, Yeongho; Lee, Sang Jun; Kim, Eun Kyu.

In: Solar Energy Materials and Solar Cells, Vol. 207, 110359, 04.2020.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Broadband antireflective coatings for high efficiency InGaP/GaAs/InGaAsP/InGaAs multi-junction solar cells

AU - Oh, Gyujin

AU - Kim, Yeongho

AU - Lee, Sang Jun

AU - Kim, Eun Kyu

PY - 2020/4

Y1 - 2020/4

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AB - Design and fabrication of antireflection coatings (ARCs) was performed to maximize the photocurrent of Ⅲ-Ⅴ solar cells based on InGaP, GaAs, InGaAsP, and InGaAs. The current-limiting behavior of multi-junction solar cells allowed only the specific design of ARCs to improve the total current density of multi-junction solar cells, which enabled thin and efficient antireflection layers to achieve their full potential. ARCs were designed for InGaP/GaAs and InGaAsP/InGaAs double junction solar cells and InGaP/GaAs/InGaAsP/InGaAs quadruple junction solar cells. From the ARC design results, the best solar cell reflectance at the region of interest appeared to be 1.44% for InGaP/GaAs solar cells, 2.17% for InGaAsP/InGaAs, and 0.48% for the quadruple junction solar cells. To achieve the preferred refractive index for the ARC structures, nanostructures fabricated via glancing angle deposition were utilized. With ARC fabricated structures, InGaP/GaAs double junction solar cells yielded a power conversion efficiency of 13.3%, which was 1.34 times higher than that of cells without ARC (9.91%). Additionally, calculation results for the various ARC designs using dual and triple material systems were provided to increase their applicability.

KW - Anti-reflection coating

KW - Glancing angle deposition

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KW - Ⅲ-Ⅴ Solar cells

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