Bismuth oxide thin films prepared by chemical bath deposition (CBD) method: Annealing effect

T. P. Gujar, V. R. Shinde, C. D. Lokhande, R. S. Mane, Sung Hwan Han

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Bismuth oxide thin films have been deposited by room temperature chemical bath deposition (CBD) method and annealed at 623 K in air. They were characterized for structural, surface morphological, optical and electrical properties. From the X-ray diffraction patterns, it was found that after annealing a non-stoichiometric phase, Bi 2 O 2.33 , was removed and phase pure monoclinic Bi 2 O 3 was obtained. Surface morphology of Bi 2 O 3 film at lower magnification SEM showed rod-like structure, however, higher magnification showed a rectangular slice-like structure perpendicular to substrate, giving rise to microrods on the surface. The optical studies showed the decrease in band gap by 0.3 eV after annealing. The electrical resistivity variation showed semiconductor behavior and from thermoemf measurements, the electrical conductivity was found to be of n-type.

Original languageEnglish
Pages (from-to)161-167
Number of pages7
JournalApplied Surface Science
Issue number1-4
StatePublished - 2005 Aug 31


  • Bi O
  • Chemical bath deposition
  • Electrical resistivity
  • Optical
  • SEM

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