Bio-realistic synaptic characteristics in the cone-shaped ZnO memristive device

Andrey Sergeevich Sokolov, Yu Rim Jeon, Sohyeon Kim, Boncheol Ku, Changhwan Choi

Research output: Contribution to journalArticleResearchpeer-review

1 Citation (Scopus)

Abstract

We demonstrate inherent biorealistic synaptic plasticity functions in the Pt/n-ZnO/SiO 2–x /Pt heterostructures, where the n-ZnO semiconductor is geometrically cone-shaped in the size of a few nanometers. The synaptic functions were achieved within a two-terminal, electroforming-free, and low-power rectifying diode-like resistive switching device. The important rate-dependent synaptic functions, such as the nonlinear transient conduction behavior, short- and long-term plasticity, paired-pulse facilitation, spike-rate-dependent plasticity and sliding threshold effect, were investigated in a single device. These characteristics closely mimic the memory and learning functions of those in biosynapses, where frequency-dependent identical spiking operations are mostly taking place, and we emulate these characteristics in the “Learning-Forgetting-Relearning” synaptic behavior. The switching dynamics in the cone-shaped n-ZnO semiconductor are correlated with the transport mechanism along the grain boundaries of the charged ion species, namely, oxygen vacancies and charged oxygen. The diffusion and generation/recombination of these defects have specific time scales of self-decay by virtue of the asymmetric profile of the n-ZnO cone defects. Finally, the essential biorealistic synaptic plasticity functions were discovered for the perspectives of dynamic/adaptive electronic synapse implementations in hardware-based neuromorphic computing.

Original languageEnglish
Article number5
JournalNPG Asia Materials
Volume11
Issue number1
DOIs
StatePublished - 2019 Dec 1

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Cones
cones
Cone
plastic properties
Plasticity
learning
Dependent
Oxygen
Semiconductors
Defects
Semiconductor materials
Electroforming
electroforming
synapses
spiking
Adaptive Dynamics
Heterostructures
Synapse
Vacancy
defects

Cite this

Sokolov, Andrey Sergeevich ; Jeon, Yu Rim ; Kim, Sohyeon ; Ku, Boncheol ; Choi, Changhwan. / Bio-realistic synaptic characteristics in the cone-shaped ZnO memristive device. In: NPG Asia Materials. 2019 ; Vol. 11, No. 1.
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Bio-realistic synaptic characteristics in the cone-shaped ZnO memristive device. / Sokolov, Andrey Sergeevich; Jeon, Yu Rim; Kim, Sohyeon; Ku, Boncheol; Choi, Changhwan.

In: NPG Asia Materials, Vol. 11, No. 1, 5, 01.12.2019.

Research output: Contribution to journalArticleResearchpeer-review

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