Atomic layer deposition: Overview and applications

Seokyoon Shin, Giyul Ham, Heeyoung Jeon, Jingyu Park, Woochool Jang, Hyeongtag Jeon

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

Atomic layer deposition(ALD) is a promising deposition method and has been studied and used in many different areas, such as displays, semiconductors, batteries, and solar cells. This method, which is based on a self-limiting growth mechanism, facilitates precise control of film thickness at an atomic level and enables deposition on large and three dimensionally complex surfaces. For instance, ALD technology is very useful for 3D and high aspect ratio structures such as dynamic random access memory(DRAM) and other non-volatile memories(NVMs). In addition, a variety of materials can be deposited using ALD, oxides, nitrides, sulfides, metals, and so on. In conventional ALD, the source and reactant are pulsed into the reaction chamber alternately, one at a time, separated by purging or evacuation periods. Thermal ALD and metal organic ALD are also used, but these have their own advantages and disadvantages. Furthermore, plasma-enhanced ALD has come into the spotlight because it has more freedom in processing conditions; it uses highly reactive radicals and ions and for a wider range of material properties than the conventional thermal ALD, which uses H2O and O3 as an oxygen reactant. However, the throughput is still a challenge for a current time divided ALD system. Therefore, a new concept of ALD, fast ALD or spatial ALD, which separate half-reactions spatially, has been extensively under development. In this paper, we reviewed these variouskinds of ALD equipment, possible materials using ALD, and recent ALD research applications mainly focused on materials required in microelectronics.

Original languageEnglish
Pages (from-to)405-422
Number of pages18
JournalKorean Journal of Materials Research
Volume23
Issue number8
DOIs
Publication statusPublished - 2013 Nov 6

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Keywords

  • Atomic layer deposition
  • Self-limiting
  • Spatial ALD.
  • Surface reaction

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