Atomic layer deposition of titanium dioxide films using a metal organic precursor (C12H23N3Ti) and H2O (DI water)

Byunguk Kim, Namgue Lee, Suhyeon Park, Taehun Park, Jaiwon Song, Seungwook Han, Hyunwoo Park, Dahyun Lee, Hohoon Kim, Hyeongtag Jeon

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We investigated the deposition of titanium dioxide (TiO2) thin films. TiO2 thin films were deposited using flow-type atomic layer deposition (ALD) and the new MAP Ti (C12H23N3Ti) precursor and deionized water (DI) as a reactant. For the deposition of TiO2 thin films using the new Ti precursor and DI, the ALD window was between 250 °C and 275 °C, which is lower than the ALD window using conventional metal organic Ti precursors. X-ray photoelectron spectroscopy (XPS) analysis showed that the Ti:O ratio was about 1:1.8. Additionally, there were almost no impurities in the thin film, confirming that TiO2 thin film was deposited with the proposed method. After heat treatment of thin films in the range of 400 °C–800 °C, X-ray diffraction (XRD) measurements were conducted. When the heat treatment was performed at 700 °C, a mixed anatase and rutile phase appeared. However, when the heat treatment was done at 800 °C, the anatase phase disappeared and only the rutile phase was obtained. Based on C–V and I–V analyses, dielectric constant values from 32 to 94 were obtained as the heat treatment temperature increased. Additionally, the leakage current was 10−5 A/cm2, which is superior to previously reported TiO2 thin films.

Original languageEnglish
Article number157931
JournalJournal of Alloys and Compounds
StatePublished - 2021 Mar 15


  • Atomic layer deposition
  • High-k
  • Leakage current
  • Metal organic precursor
  • Titanium dioxide


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