Atomic layer chemical vapor deposition of SiO2 thin films using a chlorine-free silicon precursor for 3D NAND applications

Geon Ho Baek, Ji hoon Baek, Hye mi Kim, Seunghwan Lee, Yusung Jin, Hyung Soon Park, Deok Sin Kil, Sangho Kim, Yongjoo Park, Jin Seong Park

Research output: Contribution to journalArticlepeer-review


Atomic layer deposition and atomic layer chemical vapor deposition (ALD, ALCVD) of SiO2 films were investigated over a wide range of high temperatures (from 525 °C to 700 °C) using chlorine-free amino silane as the Si precursor and O3 as the oxygen reactant. The ALD window occurred at 550–600 °C. The growth per cycle (GPC) of the SiO2 films was about 1.14–1.58 Å/cycle for deposition temperatures between 525 and 700 °C. There were no chlorine impurities detected in any of the deposited ALCVD films. Above a deposition temperature of 750 °C, the SiO2 films exhibited conventional chemical vapor deposition (CVD) behavior due to precursor decomposition, as evidenced by high GPC (5.51 Å/cycle) and a significant impurity content (carbon 0.2 at% and nitrogen 0.4 at%). The SiO2 films had high film density (2.3 g/cm3), minimal roughness (rms ~ 0.16 nm). In addition, the wet etch rate (WER) of the SiO2 films decreased from 3.0 to 2.1 nm/min. The ALD SiO2 film at 600 °C exhibited excellent electrical performance, such as a leakage current density of 5.03 × 10−9 A/cm2 (at 3 MV/cm) and a breakdown field of 10.3 MV/cm.

Original languageEnglish
Pages (from-to)19036-19042
Number of pages7
JournalCeramics International
Issue number13
StatePublished - 2021 Jul 1


  • 3D NAND flash memory
  • Cl-free Si precursor
  • High-temperature process
  • Thermal atomic layer deposition
  • Tunneling oxide layer


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