Atomic arrangements of (Ga1-x Mnx) N nanorods grown on Al2 O3 substrates

K. H. Lee, J. Y. Lee, J. H. Jung, T. W. Kim, H. C. Jeon, T. W. Kang

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Abstract

X-ray diffraction (XRD) and selected area electron diffraction pattern (SADP) results showed that the (Ga1-x Mnx) N nanorods had preferential c -axial growth direction. Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) images showed that one-dimensional (Ga1-x Mnx) N nanorods without defects had c -axis-oriented crystalline wurzite structures. Atomic arrangements for the (Ga1-x Mnx) N nanorods grown on the Al2 O3 (0001) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results.

Original languageEnglish
Article number141919
JournalApplied Physics Letters
Volume92
Issue number14
DOIs
StatePublished - 2008 Apr 21

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    Lee, K. H., Lee, J. Y., Jung, J. H., Kim, T. W., Jeon, H. C., & Kang, T. W. (2008). Atomic arrangements of (Ga1-x Mnx) N nanorods grown on Al2 O3 substrates. Applied Physics Letters, 92(14), [141919]. https://doi.org/10.1063/1.2902321