Ar ion plasma surface modification on the heterostructured TaOx/InGaZnO thin films for flexible memristor synapse

Andrey S. Sokolov, Yu Rim Jeon, Boncheol Ku, Changhwan Choi

Research output: Contribution to journalArticle

Abstract

The enhanced resistive switching (RS) characteristics of the flexible TaOx/InGaZnO (IGZO)-based bilayer memristor deposited on the polyethylene terephthalate (PET) substrate are demonstrated in the Ti/TaOx/IGZO/Pt heterostructure. The Ar ion (Ar+) plasma treatment was intentionally induced on the surface of TaOx/IGZO thin films to improve RS filament consistency and results displayed the improved uniform RS behavior of the plasma-treated device. Further, this device is investigated as an artificial electronic synapse and important synaptic functions such as long term potentiation (LTP), long term depression (LTD), paired-pulse facilitation (PPF), post-tetanic potential (PTP) and spike-timing dependent plasticity (STDP) characteristics are well emulated and analogues to the biological synapse behavior. The bending test to assess influence of stress/strain induction on the RS properties is also demonstrated. Further, bulk and angle-resolved x-ray photoelectron spectroscopy (XPS) is utilized to shed a light on the influence of Ar+ plasma on the surface of TaOx/IGZO thin films, as well as AFM analysis, and this insight is argued in the elaborated RS mechanism discussion.

Original languageEnglish
Article number153625
JournalJournal of Alloys and Compounds
Volume822
DOIs
Publication statusPublished - 2020 May 5

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Keywords

  • Ar ions plasma
  • Flexible substrate
  • Heterostructure thin film
  • Surface modification
  • Synapse memristor

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