We have prepared the gallium oxide (Ga 2 O 3 ) thin films on sapphire substrates by the metal organic chemical vapor deposition (MOCVD) technique. We have compared the two films with and without the thermal annealing by using the X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and the photoluminescence (PL) spectra. Postdeposition annealing of amorphous Ga 2 O 3 films was found to increase the degree of crystallization and the surface roughness. The PL emission intensities of bands in the blue-green and the ultraviolet regions increased by the thermal annealing.
- Ga O
- Thin film