Annealing effects on the properties of Ga 2 O 3 thin films grown on sapphire by the metal organic chemical vapor deposition

Hyoun Woo Kim, Nam Ho Kim

Research output: Contribution to journalArticle

60 Scopus citations

Abstract

We have prepared the gallium oxide (Ga 2 O 3 ) thin films on sapphire substrates by the metal organic chemical vapor deposition (MOCVD) technique. We have compared the two films with and without the thermal annealing by using the X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and the photoluminescence (PL) spectra. Postdeposition annealing of amorphous Ga 2 O 3 films was found to increase the degree of crystallization and the surface roughness. The PL emission intensities of bands in the blue-green and the ultraviolet regions increased by the thermal annealing.

Original languageEnglish
Pages (from-to)301-306
Number of pages6
JournalApplied Surface Science
Volume230
Issue number1-4
DOIs
StatePublished - 2004 May 31

Keywords

  • Annealing
  • Ga O
  • MOCVD
  • Thin film

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