Anisotropic pattern transfer in SnO2 thin films for the fabrication of nanostructure-based gas sensors

Jong Cheon Park, Sungu Hwang, Jong Man Kim, Jin Kon Kim, Woon Young Lee, Jin Seong Park, Eun Hee Kim, Yeon Gil Jung, Kwang Bo Shim, Hyun Cho

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Abstract

It is important to develop an anisotropic etch process for the fabrication of highly-aligned nanostructure-based SnO2 gas sensors by a top-down approach. In this study, anisotropic pattern transfer was performed into SnO2 films in BCl3/Ar and CF4/ Ar inductively coupled plasma discharges. Both chemistries produced practical and controllable etch rates of SnO2, with maximum etch rates -1850 Å/minute for BCl3/Ar and -1400 Å/minute for CF4/Ar mixtures were obtained. Etch selectivities in the range of 1-5 were obtained for SnO 2 over an Al mask layer in the CF4/Ar mixtures. The etched SnO2 films showed smooth surface morphologies and a vertical sidewall profile was acquired. The BCl3/Ar and CF4/Ar ICP etching was found to be very applicable to the fabrication of one-dimensional nanostructure-based SnO2 gas sensors.

Original languageEnglish
Pages (from-to)827-831
Number of pages5
JournalJournal of Ceramic Processing Research
Volume10
Issue number6
Publication statusPublished - 2009 Dec 1

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Keywords

  • Anisotropic pattern transfer
  • Bcl/ar
  • Cf/ar
  • Inductively coupled plasma etching
  • Nanostructure-based sno gas sensors
  • Tin oxide

Cite this

Park, J. C., Hwang, S., Kim, J. M., Kim, J. K., Lee, W. Y., Park, J. S., ... Cho, H. (2009). Anisotropic pattern transfer in SnO2 thin films for the fabrication of nanostructure-based gas sensors. Journal of Ceramic Processing Research, 10(6), 827-831.