Amorphous phase formation of titanium silicide on the 4° off-axis and on-axis Si(100) substrates

Hyeongtag Jeon, Sukjae Lee, Hwackjoo Lee, Hyun Ruh

Research output: Contribution to journalConference article

Abstract

Two different Si(100) substrates, the 4° off-axis and the on-axis Si(100), were prepared. Ti thin films were deposited in an e-beam evaporation system and the amorphous layers of Ti-silicide were formed at different annealing temperatures. The Si(100) substrates before Ti film deposition were examined with AFM to verify the atomic scale roughness of the initial Si substrates. The amorphous layer was observed by HRTEM and TEM. And the chemical analysis and phase identification were examined by AES and XRD. The Si(100) substrate after HF clean shows the atomic scale microroughness such as atomic steps and pits on the Si surface. The on-axis Si(100) substrate exhibits much rougher surface morphologies than those of the off-axis Si(100). These differences of atomic scale roughnesses of Si substrates result in the difference of the thicknesses of amorphous Ti-silicide layers. The amorphous layer thicknesses on the on-axis exhibit thicker than those of the off-axis Si(100) and these differences in amorphous layer thicknesses became decreased as annealing temperatures increased. These indicate that the role of the atomic scale roughness on the amorphous layer thickness is much significant at low temperatures. In this study, the correlation between the atomic scale roughness and the amorphous layer thickness is discussed in terms of the atomic steps and pits based on the observation with using analysis tools such as AFM, TEM and HRTEM.

Original languageEnglish
Pages (from-to)553-558
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume427
StatePublished - 1996 Dec 1
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1996 Apr 71996 Apr 12

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titanium
Titanium
Substrates
roughness
Surface roughness
atomic force microscopy
Annealing
Transmission electron microscopy
transmission electron microscopy
annealing
titanium silicide
chemical analysis
Temperature
Surface morphology
Evaporation
evaporation
Thin films
temperature
thin films
Chemical analysis

Cite this

@article{863e390863f74c91b6b5ff9fbdcc8367,
title = "Amorphous phase formation of titanium silicide on the 4° off-axis and on-axis Si(100) substrates",
abstract = "Two different Si(100) substrates, the 4° off-axis and the on-axis Si(100), were prepared. Ti thin films were deposited in an e-beam evaporation system and the amorphous layers of Ti-silicide were formed at different annealing temperatures. The Si(100) substrates before Ti film deposition were examined with AFM to verify the atomic scale roughness of the initial Si substrates. The amorphous layer was observed by HRTEM and TEM. And the chemical analysis and phase identification were examined by AES and XRD. The Si(100) substrate after HF clean shows the atomic scale microroughness such as atomic steps and pits on the Si surface. The on-axis Si(100) substrate exhibits much rougher surface morphologies than those of the off-axis Si(100). These differences of atomic scale roughnesses of Si substrates result in the difference of the thicknesses of amorphous Ti-silicide layers. The amorphous layer thicknesses on the on-axis exhibit thicker than those of the off-axis Si(100) and these differences in amorphous layer thicknesses became decreased as annealing temperatures increased. These indicate that the role of the atomic scale roughness on the amorphous layer thickness is much significant at low temperatures. In this study, the correlation between the atomic scale roughness and the amorphous layer thickness is discussed in terms of the atomic steps and pits based on the observation with using analysis tools such as AFM, TEM and HRTEM.",
author = "Hyeongtag Jeon and Sukjae Lee and Hwackjoo Lee and Hyun Ruh",
year = "1996",
month = "12",
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language = "English",
volume = "427",
pages = "553--558",
journal = "Materials Research Society Symposium - Proceedings",
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}

Amorphous phase formation of titanium silicide on the 4° off-axis and on-axis Si(100) substrates. / Jeon, Hyeongtag; Lee, Sukjae; Lee, Hwackjoo; Ruh, Hyun.

In: Materials Research Society Symposium - Proceedings, Vol. 427, 01.12.1996, p. 553-558.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Amorphous phase formation of titanium silicide on the 4° off-axis and on-axis Si(100) substrates

AU - Jeon, Hyeongtag

AU - Lee, Sukjae

AU - Lee, Hwackjoo

AU - Ruh, Hyun

PY - 1996/12/1

Y1 - 1996/12/1

N2 - Two different Si(100) substrates, the 4° off-axis and the on-axis Si(100), were prepared. Ti thin films were deposited in an e-beam evaporation system and the amorphous layers of Ti-silicide were formed at different annealing temperatures. The Si(100) substrates before Ti film deposition were examined with AFM to verify the atomic scale roughness of the initial Si substrates. The amorphous layer was observed by HRTEM and TEM. And the chemical analysis and phase identification were examined by AES and XRD. The Si(100) substrate after HF clean shows the atomic scale microroughness such as atomic steps and pits on the Si surface. The on-axis Si(100) substrate exhibits much rougher surface morphologies than those of the off-axis Si(100). These differences of atomic scale roughnesses of Si substrates result in the difference of the thicknesses of amorphous Ti-silicide layers. The amorphous layer thicknesses on the on-axis exhibit thicker than those of the off-axis Si(100) and these differences in amorphous layer thicknesses became decreased as annealing temperatures increased. These indicate that the role of the atomic scale roughness on the amorphous layer thickness is much significant at low temperatures. In this study, the correlation between the atomic scale roughness and the amorphous layer thickness is discussed in terms of the atomic steps and pits based on the observation with using analysis tools such as AFM, TEM and HRTEM.

AB - Two different Si(100) substrates, the 4° off-axis and the on-axis Si(100), were prepared. Ti thin films were deposited in an e-beam evaporation system and the amorphous layers of Ti-silicide were formed at different annealing temperatures. The Si(100) substrates before Ti film deposition were examined with AFM to verify the atomic scale roughness of the initial Si substrates. The amorphous layer was observed by HRTEM and TEM. And the chemical analysis and phase identification were examined by AES and XRD. The Si(100) substrate after HF clean shows the atomic scale microroughness such as atomic steps and pits on the Si surface. The on-axis Si(100) substrate exhibits much rougher surface morphologies than those of the off-axis Si(100). These differences of atomic scale roughnesses of Si substrates result in the difference of the thicknesses of amorphous Ti-silicide layers. The amorphous layer thicknesses on the on-axis exhibit thicker than those of the off-axis Si(100) and these differences in amorphous layer thicknesses became decreased as annealing temperatures increased. These indicate that the role of the atomic scale roughness on the amorphous layer thickness is much significant at low temperatures. In this study, the correlation between the atomic scale roughness and the amorphous layer thickness is discussed in terms of the atomic steps and pits based on the observation with using analysis tools such as AFM, TEM and HRTEM.

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