AlN piezoelectric materials for wireless communication thin film components

Ju Hyung Kim, Si Hyung Lee, Jinho Ahn, Jeon Kook Lee

Research output: Contribution to journalArticle

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Abstract

A Bragg reflector type FBAR using AlN piezoelectric with quarter wavelength thickness has been fabricated, where the Bragg reflector was composed of W-SiO2 pairs. By numerical simulation, considering actual acoustic losses of each layer, an analysis of the frequency response of the resonator has been made and this could be explained using an equivalent circuit with parasitic elements. The Effective electromechanical coupling constant (K2eff) and the Quality factor (Qs), figures of merit of the resonator, were about 1.1% and 307, respectively.

Original languageEnglish
Pages (from-to)25-28
Number of pages4
JournalJournal of Ceramic Processing Research
Volume3
Issue number1
Publication statusPublished - 2002 Dec 1

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Keywords

  • AlN
  • Bragg reflector
  • FBAR

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