All Mg B2 tunnel junctions with Al2 O3 or MgO tunnel barriers

Heejae Shim, K. S. Yoon, J. S. Moodera, Jin Pyo Hong

Research output: Contribution to journalArticle

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Abstract

All Mg B2 thin film tunnel junctions with Al2 O3 or MgO tunnel barriers were fabricated in situ on Si substrates in a molecular beam epitaxy system and their tunneling characteristics were investigated. In the quasiparticle tunneling spectra of the junction with Al2 O3 tunnel barrier, we observed both superconducting gaps of Mg B2, while only a small gap was seen with MgO tunnel barrier. Using a microscopic structural analysis, we found that the difference in the spectra is due to the crystal orientation difference of the Mg B2 films: the film grown on Al2 O3 was polycrystalline whereas the film grown on MgO was c -axis oriented.

Original languageEnglish
Article number212509
JournalApplied Physics Letters
Volume90
Issue number21
DOIs
StatePublished - 2007 Jun 1

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tunnel junctions
tunnels
structural analysis
molecular beam epitaxy
thin films
crystals

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Shim, Heejae ; Yoon, K. S. ; Moodera, J. S. ; Hong, Jin Pyo. / All Mg B2 tunnel junctions with Al2 O3 or MgO tunnel barriers. In: Applied Physics Letters. 2007 ; Vol. 90, No. 21.
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All Mg B2 tunnel junctions with Al2 O3 or MgO tunnel barriers. / Shim, Heejae; Yoon, K. S.; Moodera, J. S.; Hong, Jin Pyo.

In: Applied Physics Letters, Vol. 90, No. 21, 212509, 01.06.2007.

Research output: Contribution to journalArticle

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