Air-Stable CuInSe 2 Nanocrystal Transistors and Circuits via Post-Deposition Cation Exchange

Han Wang, Derrick J. Butler, Daniel B. Straus, Nuri Oh, Fengkai Wu, Jiacen Guo, Kun Xue, Jennifer D. Lee, Christopher B. Murray, Cherie R. Kagan

Research output: Contribution to journalArticleResearchpeer-review

Abstract

Colloidal semiconductor nanocrystals (NCs) are a promising materials class for solution-processable, next-generation electronic devices. However, most high-performance devices and circuits have been achieved using NCs containing toxic elements, which may limit their further device development. We fabricate high mobility CuInSe 2 NC field-effect transistors (FETs) using a solution-based, post-deposition, sequential cation exchange process that starts with electronically coupled, thiocyanate (SCN)-capped CdSe NC thin films. First Cu + is substituted for Cd 2+ transforming CdSe NCs to Cu-rich Cu 2 Se NC films. Next, Cu 2 Se NC films are dipped into a Na 2 Se solution to Se-enrich the NCs, thus compensating the Cu-rich surface, promoting fusion of the Cu 2 Se NCs, and providing sites for subsequent In-dopants. The liquid-coordination-complex trioctylphosphine-indium chloride (TOP-InCl 3 ) is used as a source of In 3+ to partially exchange and n-dope CuInSe 2 NC films. We demonstrate Al 2 O 3 -encapsulated, air-stable CuInSe 2 NC FETs with linear (saturation) electron mobilities of 8.2 ± 1.8 cm 2 /(V s) (10.5 ± 2.4 cm 2 /(V s)) and with current modulation of 10 5 , comparable to that for high-performance Cd-, Pb-, and As-based NC FETs. The CuInSe 2 NC FETs are used as building blocks of integrated inverters to demonstrate their promise for low-cost, low-toxicity NC circuits.

Original languageEnglish
JournalACS nano
DOIs
StatePublished - 2019 Jan 1

Fingerprint

Nanocrystals
Cations
Ion exchange
nanocrystals
Transistors
transistors
Positive ions
cations
Networks (circuits)
air
Air
Field effect transistors
field effect transistors
inverters
Electron mobility
Poisons
Coordination Complexes
electron mobility
toxicity
Indium

Keywords

  • copper indium diselenide
  • doping
  • field effect transistors
  • integrated circuits
  • nanocrystals
  • solution process
  • stoichiometry

Cite this

Wang, Han ; Butler, Derrick J. ; Straus, Daniel B. ; Oh, Nuri ; Wu, Fengkai ; Guo, Jiacen ; Xue, Kun ; Lee, Jennifer D. ; Murray, Christopher B. ; Kagan, Cherie R. / Air-Stable CuInSe 2 Nanocrystal Transistors and Circuits via Post-Deposition Cation Exchange In: ACS nano. 2019.
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abstract = "Colloidal semiconductor nanocrystals (NCs) are a promising materials class for solution-processable, next-generation electronic devices. However, most high-performance devices and circuits have been achieved using NCs containing toxic elements, which may limit their further device development. We fabricate high mobility CuInSe 2 NC field-effect transistors (FETs) using a solution-based, post-deposition, sequential cation exchange process that starts with electronically coupled, thiocyanate (SCN)-capped CdSe NC thin films. First Cu + is substituted for Cd 2+ transforming CdSe NCs to Cu-rich Cu 2 Se NC films. Next, Cu 2 Se NC films are dipped into a Na 2 Se solution to Se-enrich the NCs, thus compensating the Cu-rich surface, promoting fusion of the Cu 2 Se NCs, and providing sites for subsequent In-dopants. The liquid-coordination-complex trioctylphosphine-indium chloride (TOP-InCl 3 ) is used as a source of In 3+ to partially exchange and n-dope CuInSe 2 NC films. We demonstrate Al 2 O 3 -encapsulated, air-stable CuInSe 2 NC FETs with linear (saturation) electron mobilities of 8.2 ± 1.8 cm 2 /(V s) (10.5 ± 2.4 cm 2 /(V s)) and with current modulation of 10 5 , comparable to that for high-performance Cd-, Pb-, and As-based NC FETs. The CuInSe 2 NC FETs are used as building blocks of integrated inverters to demonstrate their promise for low-cost, low-toxicity NC circuits.",
keywords = "copper indium diselenide, doping, field effect transistors, integrated circuits, nanocrystals, solution process, stoichiometry",
author = "Han Wang and Butler, {Derrick J.} and Straus, {Daniel B.} and Nuri Oh and Fengkai Wu and Jiacen Guo and Kun Xue and Lee, {Jennifer D.} and Murray, {Christopher B.} and Kagan, {Cherie R.}",
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Wang, H, Butler, DJ, Straus, DB, Oh, N, Wu, F, Guo, J, Xue, K, Lee, JD, Murray, CB & Kagan, CR 2019, ' Air-Stable CuInSe 2 Nanocrystal Transistors and Circuits via Post-Deposition Cation Exchange ' ACS nano. https://doi.org/10.1021/acsnano.8b09055

Air-Stable CuInSe 2 Nanocrystal Transistors and Circuits via Post-Deposition Cation Exchange . / Wang, Han; Butler, Derrick J.; Straus, Daniel B.; Oh, Nuri; Wu, Fengkai; Guo, Jiacen; Xue, Kun; Lee, Jennifer D.; Murray, Christopher B.; Kagan, Cherie R.

In: ACS nano, 01.01.2019.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Air-Stable CuInSe 2 Nanocrystal Transistors and Circuits via Post-Deposition Cation Exchange

AU - Wang, Han

AU - Butler, Derrick J.

AU - Straus, Daniel B.

AU - Oh, Nuri

AU - Wu, Fengkai

AU - Guo, Jiacen

AU - Xue, Kun

AU - Lee, Jennifer D.

AU - Murray, Christopher B.

AU - Kagan, Cherie R.

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N2 - Colloidal semiconductor nanocrystals (NCs) are a promising materials class for solution-processable, next-generation electronic devices. However, most high-performance devices and circuits have been achieved using NCs containing toxic elements, which may limit their further device development. We fabricate high mobility CuInSe 2 NC field-effect transistors (FETs) using a solution-based, post-deposition, sequential cation exchange process that starts with electronically coupled, thiocyanate (SCN)-capped CdSe NC thin films. First Cu + is substituted for Cd 2+ transforming CdSe NCs to Cu-rich Cu 2 Se NC films. Next, Cu 2 Se NC films are dipped into a Na 2 Se solution to Se-enrich the NCs, thus compensating the Cu-rich surface, promoting fusion of the Cu 2 Se NCs, and providing sites for subsequent In-dopants. The liquid-coordination-complex trioctylphosphine-indium chloride (TOP-InCl 3 ) is used as a source of In 3+ to partially exchange and n-dope CuInSe 2 NC films. We demonstrate Al 2 O 3 -encapsulated, air-stable CuInSe 2 NC FETs with linear (saturation) electron mobilities of 8.2 ± 1.8 cm 2 /(V s) (10.5 ± 2.4 cm 2 /(V s)) and with current modulation of 10 5 , comparable to that for high-performance Cd-, Pb-, and As-based NC FETs. The CuInSe 2 NC FETs are used as building blocks of integrated inverters to demonstrate their promise for low-cost, low-toxicity NC circuits.

AB - Colloidal semiconductor nanocrystals (NCs) are a promising materials class for solution-processable, next-generation electronic devices. However, most high-performance devices and circuits have been achieved using NCs containing toxic elements, which may limit their further device development. We fabricate high mobility CuInSe 2 NC field-effect transistors (FETs) using a solution-based, post-deposition, sequential cation exchange process that starts with electronically coupled, thiocyanate (SCN)-capped CdSe NC thin films. First Cu + is substituted for Cd 2+ transforming CdSe NCs to Cu-rich Cu 2 Se NC films. Next, Cu 2 Se NC films are dipped into a Na 2 Se solution to Se-enrich the NCs, thus compensating the Cu-rich surface, promoting fusion of the Cu 2 Se NCs, and providing sites for subsequent In-dopants. The liquid-coordination-complex trioctylphosphine-indium chloride (TOP-InCl 3 ) is used as a source of In 3+ to partially exchange and n-dope CuInSe 2 NC films. We demonstrate Al 2 O 3 -encapsulated, air-stable CuInSe 2 NC FETs with linear (saturation) electron mobilities of 8.2 ± 1.8 cm 2 /(V s) (10.5 ± 2.4 cm 2 /(V s)) and with current modulation of 10 5 , comparable to that for high-performance Cd-, Pb-, and As-based NC FETs. The CuInSe 2 NC FETs are used as building blocks of integrated inverters to demonstrate their promise for low-cost, low-toxicity NC circuits.

KW - copper indium diselenide

KW - doping

KW - field effect transistors

KW - integrated circuits

KW - nanocrystals

KW - solution process

KW - stoichiometry

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