Adsorption of thiophene on Al( 1 1 1 ) and deposition of aluminum on condensed thiophene

S. K. Sengupta, H. Ahn, James E. Whitten

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The adsorption of thiophene on clean Al( 1 1 1 ) at 90 and 130 K has been studied with X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) and work function measurements. Relatively weak chemisorption compared to adsorption on transition metals is indicated by minor changes in the valence spectrum in progressing from monolayer to multilayer thiophene, a modest work function change of -0.50 eV due to saturation dosing, and return of the work function and valence spectrum to that of clean Al( 1 1 1 ) upon annealing at 210 K. The complementary experiment in which aluminum is thermally deposited on multilayer thiophene condensed on gold at 130 K has also been performed. XPS peak area analysis shows that metal doses less than 14 × 1015 atoms/cm2 result in penetration through the physisorbed thiophene, but higher doses lead to the gradual build up of metal throughout the organic layer. Persistence of the thiophene UPS valence features for metal doses of 50 × 1015 atoms/cm2 is consistent with penetration and aluminum island formation. For aluminum deposition on thiophene, charge transfer from aluminum is evidenced by metal-induced low binding energy components in the C 1s and S 2p spectra at 282.6 and 162.5 eV, respectively, and a shift in the Al 2p spectrum of 0.5 eV to higher binding energy compared to metallic aluminum. UPS also indicates progression of the frontier orbital toward the Fermi level as aluminum is deposited.

Original languageEnglish
Pages (from-to)207-216
Number of pages10
JournalSurface Science
Volume520
Issue number3
DOIs
StatePublished - 2002 Dec 21

Fingerprint

Thiophenes
Thiophene
thiophenes
Aluminum
aluminum
Adsorption
adsorption
Metals
X ray photoelectron spectroscopy
Binding energy
valence
dosage
metals
Multilayers
penetration
binding energy
Ultraviolet photoelectron spectroscopy
Atoms
ultraviolet spectroscopy
Chemisorption

Keywords

  • Aluminum
  • Aromatics
  • Chemisorption
  • Gold
  • Growth
  • Metallic films
  • Photoelectron spectroscopy
  • Work function measurements

Cite this

Sengupta, S. K. ; Ahn, H. ; Whitten, James E. / Adsorption of thiophene on Al( 1 1 1 ) and deposition of aluminum on condensed thiophene. In: Surface Science. 2002 ; Vol. 520, No. 3. pp. 207-216.
@article{d01e39d6be1840caaae3dbdaba8ad50f,
title = "Adsorption of thiophene on Al( 1 1 1 ) and deposition of aluminum on condensed thiophene",
abstract = "The adsorption of thiophene on clean Al( 1 1 1 ) at 90 and 130 K has been studied with X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) and work function measurements. Relatively weak chemisorption compared to adsorption on transition metals is indicated by minor changes in the valence spectrum in progressing from monolayer to multilayer thiophene, a modest work function change of -0.50 eV due to saturation dosing, and return of the work function and valence spectrum to that of clean Al( 1 1 1 ) upon annealing at 210 K. The complementary experiment in which aluminum is thermally deposited on multilayer thiophene condensed on gold at 130 K has also been performed. XPS peak area analysis shows that metal doses less than 14 × 1015 atoms/cm2 result in penetration through the physisorbed thiophene, but higher doses lead to the gradual build up of metal throughout the organic layer. Persistence of the thiophene UPS valence features for metal doses of 50 × 1015 atoms/cm2 is consistent with penetration and aluminum island formation. For aluminum deposition on thiophene, charge transfer from aluminum is evidenced by metal-induced low binding energy components in the C 1s and S 2p spectra at 282.6 and 162.5 eV, respectively, and a shift in the Al 2p spectrum of 0.5 eV to higher binding energy compared to metallic aluminum. UPS also indicates progression of the frontier orbital toward the Fermi level as aluminum is deposited.",
keywords = "Aluminum, Aromatics, Chemisorption, Gold, Growth, Metallic films, Photoelectron spectroscopy, Work function measurements",
author = "Sengupta, {S. K.} and H. Ahn and Whitten, {James E.}",
year = "2002",
month = "12",
day = "21",
doi = "10.1016/S0039-6028(02)02275-6",
language = "English",
volume = "520",
pages = "207--216",
journal = "Surface Science",
issn = "0039-6028",
number = "3",

}

Adsorption of thiophene on Al( 1 1 1 ) and deposition of aluminum on condensed thiophene. / Sengupta, S. K.; Ahn, H.; Whitten, James E.

In: Surface Science, Vol. 520, No. 3, 21.12.2002, p. 207-216.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Adsorption of thiophene on Al( 1 1 1 ) and deposition of aluminum on condensed thiophene

AU - Sengupta, S. K.

AU - Ahn, H.

AU - Whitten, James E.

PY - 2002/12/21

Y1 - 2002/12/21

N2 - The adsorption of thiophene on clean Al( 1 1 1 ) at 90 and 130 K has been studied with X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) and work function measurements. Relatively weak chemisorption compared to adsorption on transition metals is indicated by minor changes in the valence spectrum in progressing from monolayer to multilayer thiophene, a modest work function change of -0.50 eV due to saturation dosing, and return of the work function and valence spectrum to that of clean Al( 1 1 1 ) upon annealing at 210 K. The complementary experiment in which aluminum is thermally deposited on multilayer thiophene condensed on gold at 130 K has also been performed. XPS peak area analysis shows that metal doses less than 14 × 1015 atoms/cm2 result in penetration through the physisorbed thiophene, but higher doses lead to the gradual build up of metal throughout the organic layer. Persistence of the thiophene UPS valence features for metal doses of 50 × 1015 atoms/cm2 is consistent with penetration and aluminum island formation. For aluminum deposition on thiophene, charge transfer from aluminum is evidenced by metal-induced low binding energy components in the C 1s and S 2p spectra at 282.6 and 162.5 eV, respectively, and a shift in the Al 2p spectrum of 0.5 eV to higher binding energy compared to metallic aluminum. UPS also indicates progression of the frontier orbital toward the Fermi level as aluminum is deposited.

AB - The adsorption of thiophene on clean Al( 1 1 1 ) at 90 and 130 K has been studied with X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) and work function measurements. Relatively weak chemisorption compared to adsorption on transition metals is indicated by minor changes in the valence spectrum in progressing from monolayer to multilayer thiophene, a modest work function change of -0.50 eV due to saturation dosing, and return of the work function and valence spectrum to that of clean Al( 1 1 1 ) upon annealing at 210 K. The complementary experiment in which aluminum is thermally deposited on multilayer thiophene condensed on gold at 130 K has also been performed. XPS peak area analysis shows that metal doses less than 14 × 1015 atoms/cm2 result in penetration through the physisorbed thiophene, but higher doses lead to the gradual build up of metal throughout the organic layer. Persistence of the thiophene UPS valence features for metal doses of 50 × 1015 atoms/cm2 is consistent with penetration and aluminum island formation. For aluminum deposition on thiophene, charge transfer from aluminum is evidenced by metal-induced low binding energy components in the C 1s and S 2p spectra at 282.6 and 162.5 eV, respectively, and a shift in the Al 2p spectrum of 0.5 eV to higher binding energy compared to metallic aluminum. UPS also indicates progression of the frontier orbital toward the Fermi level as aluminum is deposited.

KW - Aluminum

KW - Aromatics

KW - Chemisorption

KW - Gold

KW - Growth

KW - Metallic films

KW - Photoelectron spectroscopy

KW - Work function measurements

UR - http://www.scopus.com/inward/record.url?scp=0037153665&partnerID=8YFLogxK

U2 - 10.1016/S0039-6028(02)02275-6

DO - 10.1016/S0039-6028(02)02275-6

M3 - Article

AN - SCOPUS:0037153665

VL - 520

SP - 207

EP - 216

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 3

ER -