Achieving High Mobility and Excellent Stability in Amorphous In-Ga-Zn-Sn-O Thin-Film Transistors

Il Man Choi, Min Jae Kim, Nuri On, Aeran Song, Kwun Bum Chung, Hoon Jeong, Jeong Ki Park, Jae Kyeong Jeong

Research output: Contribution to journalArticle

Abstract

This article reports the fabrication of high-performance amorphous indium gallium zinc tin oxide (a-IGZTO) thin-film transistors (TFTs) with superior bias stability. For comparison, amorphous indium gallium zinc oxide (a-IGZO) TFTs were also investigated to clarify the origin of the superior performance of IGZTO TFTs. It was found that the simultaneous heavy loading of In and Sn into the IGZTO system facilitated an effective mass densification, leading to a reduction in tail states and deep states. The fabricated a-IGZTO TFTs exhibited a high electron mobility (μFE) of 46.7 cm2/Vs, a subthreshold swing (SS) gate of 0.15 V/decade, and an ION/OFF ratio > 1 × 108. Furthermore, greater gate-bias stress stability was observed for the IGZTO TFTs compared with the IGZO TFTs.

Original languageEnglish
Article number8985304
Pages (from-to)1014-1020
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume67
Issue number3
DOIs
StatePublished - 2020 Mar

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Keywords

  • Amorphous indium gallium zinc oxide (a-IGZO)
  • amorphous indium gallium zinc tin oxide (a-IGZTO)
  • high performance
  • mass density
  • thin-film transistors (TFTs)

Cite this

Choi, I. M., Kim, M. J., On, N., Song, A., Chung, K. B., Jeong, H., Park, J. K., & Jeong, J. K. (2020). Achieving High Mobility and Excellent Stability in Amorphous In-Ga-Zn-Sn-O Thin-Film Transistors. IEEE Transactions on Electron Devices, 67(3), 1014-1020. [8985304]. https://doi.org/10.1109/TED.2020.2968592