Accelerated temperature and humidity testing of 2D SnS2 thin films made via four-inch-wafer-scale atomic layer deposition

Namgue Lee, Hyeongsu Choi, Hyunwoo Park, Yeonsik Choi, Hyunwoo Yuk, Jung Hoon Lee, Sung Gwon Lee, Eun Jong Lee, Hyeongtag Jeon

Research output: Contribution to journalArticle

Abstract

Tin disulfide (SnS2) has emerged as a promising two-dimensional (2D) material due to its excellent electrical and optical properties. However, research into 2D SnS2 has mainly focused on its synthesis procedures and applications; its stability to humidity and temperature has yet to be studied. In this work, 2D SnS2 thin films were grown by atomic layer deposition (ALD) and characterized by various tools, such as x-ray diffraction, Raman analysis, and transmission electron spectroscopy. Characterization reveals that ALD-grown SnS2 thin films are a high-quality 2D material. After characterization, a four-inch-wafer-scale uniformity test was performed by Raman analysis. Owing to the quality, large-area growth enabled by the ALD process, 98.72% uniformity was obtained. Finally, we calculated the thermodynamic equations for possible reactions between SnS2 and H2O to theoretically presurmise the oxidation of SnS2 during accelerated humidity and temperature testing. After the accelerated humidity and temperature test, x-ray diffraction, Raman analysis, and Auger electron spectroscopy were performed to check whether SnS2 was oxidized or not. Our data revealed that 2D SnS2 thin films were stable at humid conditions.

Original languageEnglish
Number of pages1
JournalNanotechnology
Volume31
Issue number35
DOIs
StatePublished - 2020 Aug 28

Fingerprint Dive into the research topics of 'Accelerated temperature and humidity testing of 2D SnS<sub>2</sub> thin films made via four-inch-wafer-scale atomic layer deposition'. Together they form a unique fingerprint.

  • Cite this