A reliable nonvolatile memory using alloy nanodot layer with extremely high density

Yun Heub Song, Ji Chel Bea, Kang Wook Lee, Gae Hun Lee, Tetsu Tanaka, Mitsumasa Koyanagi

Research output: Contribution to journalArticle

Abstract

A new nonvolatile memory with high density and high work-function metal nanodots, metal nanodot (MND) memory, was proposed and fundamental characteristics of MND capacitor were evaluated. In this work, a nanodot layer of FePt with high density and high workfunction (∼5.2 eV) was fabricated as a charge storage site in nonvolatile memory, and its electrical characteristics were evaluated for the possibility of nonvolatile memory in view of cell operation by Fowler-Nordheim (FN) tunneling. Here, a nanodot FePt layer was controlled as a uniform single layer with dot size of under ∼2nm and dot density of ∼1.2 × 1013/cm2. Electrical measurements of metal-oxide-semiconductor (MOS) structure with FePt nanodot layer shows a threshold voltage window of ∼6V using FN programming and erasing, which is satisfactory for operation of the nonvolatile memory. Furthermore, this structure provides better data retention characteristics compared to other metal dot materials with similar dot density in our experiments. From these results, it is expected that this nonvolatile memory using an FePt nanodot layer with high dot density and high work-function can be a candidate structure for the future nonvolatile memory.

Original languageEnglish
Pages (from-to)1065051-1065054
Number of pages4
JournalJapanese Journal of Applied Physics
Volume48
Issue number10 Part 1
DOIs
StatePublished - 2009 Dec 1

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Data storage equipment
Metals
metals
programming
Threshold voltage
metal oxide semiconductors
Field emission
threshold voltage
electrical measurement
capacitors
Capacitors
cells
Experiments

Cite this

Song, Yun Heub ; Bea, Ji Chel ; Lee, Kang Wook ; Lee, Gae Hun ; Tanaka, Tetsu ; Koyanagi, Mitsumasa. / A reliable nonvolatile memory using alloy nanodot layer with extremely high density. In: Japanese Journal of Applied Physics. 2009 ; Vol. 48, No. 10 Part 1. pp. 1065051-1065054.
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abstract = "A new nonvolatile memory with high density and high work-function metal nanodots, metal nanodot (MND) memory, was proposed and fundamental characteristics of MND capacitor were evaluated. In this work, a nanodot layer of FePt with high density and high workfunction (∼5.2 eV) was fabricated as a charge storage site in nonvolatile memory, and its electrical characteristics were evaluated for the possibility of nonvolatile memory in view of cell operation by Fowler-Nordheim (FN) tunneling. Here, a nanodot FePt layer was controlled as a uniform single layer with dot size of under ∼2nm and dot density of ∼1.2 × 1013/cm2. Electrical measurements of metal-oxide-semiconductor (MOS) structure with FePt nanodot layer shows a threshold voltage window of ∼6V using FN programming and erasing, which is satisfactory for operation of the nonvolatile memory. Furthermore, this structure provides better data retention characteristics compared to other metal dot materials with similar dot density in our experiments. From these results, it is expected that this nonvolatile memory using an FePt nanodot layer with high dot density and high work-function can be a candidate structure for the future nonvolatile memory.",
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Song, YH, Bea, JC, Lee, KW, Lee, GH, Tanaka, T & Koyanagi, M 2009, 'A reliable nonvolatile memory using alloy nanodot layer with extremely high density', Japanese Journal of Applied Physics, vol. 48, no. 10 Part 1, pp. 1065051-1065054. https://doi.org/10.1143/JJAP.48.106505

A reliable nonvolatile memory using alloy nanodot layer with extremely high density. / Song, Yun Heub; Bea, Ji Chel; Lee, Kang Wook; Lee, Gae Hun; Tanaka, Tetsu; Koyanagi, Mitsumasa.

In: Japanese Journal of Applied Physics, Vol. 48, No. 10 Part 1, 01.12.2009, p. 1065051-1065054.

Research output: Contribution to journalArticle

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