A novel fault detection circuit for short-circuit faults of IGBT

Min Sub Kim, Byoung Gun Park, Rae-Young Kim, Dong Seok Hyun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

This paper proposed a novel fault detection circuit comparing the gate voltage of IGBT. The proposed scheme is operated to protect IGBT under short-circuit faults such as hard switch-fault (HSF). The proposed circuit consists of two parts. One is the difference generator which generates a difference between a gate voltage and an input voltage. The other is the short-circuit fault detector using a charged voltage of capacitor for short-circuit fault detection. The feasibility of the proposed short-circuit detecting scheme is verified by simulation results.

Original languageEnglish
Title of host publication2011 26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011
Pages359-363
Number of pages5
DOIs
StatePublished - 2011 May 13
Event26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011 - Fort Worth, TX, United States
Duration: 2011 Mar 62011 Mar 10

Publication series

NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Other

Other26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011
CountryUnited States
CityFort Worth, TX
Period11/03/611/03/10

Fingerprint

Insulated gate bipolar transistors (IGBT)
Fault detection
Short circuit currents
Networks (circuits)
Electric potential
Capacitors
Switches
Detectors

Cite this

Kim, M. S., Park, B. G., Kim, R-Y., & Hyun, D. S. (2011). A novel fault detection circuit for short-circuit faults of IGBT. In 2011 26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011 (pp. 359-363). [5744621] (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). https://doi.org/10.1109/APEC.2011.5744621
Kim, Min Sub ; Park, Byoung Gun ; Kim, Rae-Young ; Hyun, Dong Seok. / A novel fault detection circuit for short-circuit faults of IGBT. 2011 26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011. 2011. pp. 359-363 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC).
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title = "A novel fault detection circuit for short-circuit faults of IGBT",
abstract = "This paper proposed a novel fault detection circuit comparing the gate voltage of IGBT. The proposed scheme is operated to protect IGBT under short-circuit faults such as hard switch-fault (HSF). The proposed circuit consists of two parts. One is the difference generator which generates a difference between a gate voltage and an input voltage. The other is the short-circuit fault detector using a charged voltage of capacitor for short-circuit fault detection. The feasibility of the proposed short-circuit detecting scheme is verified by simulation results.",
author = "Kim, {Min Sub} and Park, {Byoung Gun} and Rae-Young Kim and Hyun, {Dong Seok}",
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Kim, MS, Park, BG, Kim, R-Y & Hyun, DS 2011, A novel fault detection circuit for short-circuit faults of IGBT. in 2011 26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011., 5744621, Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, pp. 359-363, 26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011, Fort Worth, TX, United States, 11/03/6. https://doi.org/10.1109/APEC.2011.5744621

A novel fault detection circuit for short-circuit faults of IGBT. / Kim, Min Sub; Park, Byoung Gun; Kim, Rae-Young; Hyun, Dong Seok.

2011 26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011. 2011. p. 359-363 5744621 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - This paper proposed a novel fault detection circuit comparing the gate voltage of IGBT. The proposed scheme is operated to protect IGBT under short-circuit faults such as hard switch-fault (HSF). The proposed circuit consists of two parts. One is the difference generator which generates a difference between a gate voltage and an input voltage. The other is the short-circuit fault detector using a charged voltage of capacitor for short-circuit fault detection. The feasibility of the proposed short-circuit detecting scheme is verified by simulation results.

AB - This paper proposed a novel fault detection circuit comparing the gate voltage of IGBT. The proposed scheme is operated to protect IGBT under short-circuit faults such as hard switch-fault (HSF). The proposed circuit consists of two parts. One is the difference generator which generates a difference between a gate voltage and an input voltage. The other is the short-circuit fault detector using a charged voltage of capacitor for short-circuit fault detection. The feasibility of the proposed short-circuit detecting scheme is verified by simulation results.

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Kim MS, Park BG, Kim R-Y, Hyun DS. A novel fault detection circuit for short-circuit faults of IGBT. In 2011 26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011. 2011. p. 359-363. 5744621. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). https://doi.org/10.1109/APEC.2011.5744621