A concave-type structure of a Ru electrode capacitor fabricated by the reactive ion etching method

Byong Sun Ju, Hyoun Woo Kim

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We have developed a concave-type Ru electrode capacitor to overcome the limitation of conventional stack-type capacitor in a small critical-dimension (CD) pattern. We have deposited a Ru layer on the concave-type structure made by patterning of SiO2 and subsequently we separated the adjacent nodes by an etch-back process with hydrogen silsesquioxane (HSQ) as a protecting layer. We have summarized the issues regarding the patterning in the reactive ion etching system for fabricating the concave-type capacitor.

Original languageEnglish
Pages (from-to)30-34
Number of pages5
JournalMicroelectronic Engineering
Volume70
Issue number1
DOIs
StatePublished - 2003 Oct 1

Keywords

  • Concave
  • Etching
  • Ru
  • Scanning electron microscopy

Fingerprint Dive into the research topics of 'A concave-type structure of a Ru electrode capacitor fabricated by the reactive ion etching method'. Together they form a unique fingerprint.

  • Cite this